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30V 150A MOSFET – YJG150N03A – 75W N-Channel
30.00৳ Pcs
YJG150N03A, a powerful 30V 150A MOSFET for efficient power management.
In stock
YJG150N03A - 30V 150A MOSFET - 75W N-Channel
High-performance 30V 150A MOSFET, ideal for power management and high-current switching applications, offering low on-resistance and fast switching for efficient and reliable operation.
Simplified Schematic
Absolute Maximum Ratings
|
Parameter |
SYMBOL |
Value |
Units |
|
|---|---|---|---|---|
|
Drain-source Voltage |
VDS |
30 |
V |
|
|
Gate-source Voltage |
VGS |
±20 |
||
|
Drain Current |
TC=25℃ | ID |
150 |
A |
| TC=100℃ |
95 |
|||
|
Pulsed Drain CurrentA |
IDM |
300 |
||
|
Total Power Dissipation |
TC=25℃ B | PD |
75 |
W |
|
TC=100℃ B |
30 |
|||
| TA=25℃ B |
6.2 |
|||
|
Single Pulse Avalanche Energy D |
EAS |
400 |
mJ |
|
|
Thermal Resistance Junction-to-Case |
RθJC |
1.67 |
℃/ W |
|
|
Thermal Resistance Junction-to-Ambient |
RθJA |
20 |
||
|
Junction and Storage Temperature Range |
TJ, TSTG |
-55～+150 |
℃ |
|
- A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
- B. The power dissipation PD is based on TJ(MAX)=150℃, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
- C. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25℃.
- D. Tj=25℃, VDD=20V, VG=10V, L=2.0mH, Rg=25Ω.
Electrical Specifications
|
Parameter |
SYMBOL |
CONDITIONS |
Min |
Typ |
Max |
Units |
|---|---|---|---|---|---|---|
|
Static Parameter |
||||||
|
Drain-Source Breakdown Voltage |
BVDSS | VGS = 0V, ID = 250μA |
30 |
- |
- |
V |
|
Zero Gate Voltage Drain Current |
IDSS | VDS = 30V, VGS = 0V |
- |
1 |
A |
|
|
Gate-Body Leakage Current |
IGSS | VGS = ±20V, VDS = 0V |
±100 |
nA |
||
|
Gate Threshold Voltage |
VGS(th) | VDS = VGS, ID = 250μA |
1.0 |
1.5 |
2.5 |
V |
|
Static Drain-Source On-Resistance |
RDS(on) | VGS = 10V, ID = 20A |
- |
1.58 |
2.0 |
mΩ |
| VGS = 4.5V, ID = 20A |
- |
2.6 |
3.3 |
|||
|
Diode Forward Voltage |
VSD | IS = 20A, VGS = 0V |
- |
0.85 |
1.2 |
V |
|
Maximum Body-Diode Continuous Current |
IS |
150 |
A |
|||
|
Gate resistance |
RG |
ƒ=1 MHz, Open drain |
2.9 |
Ω |
||
|
Dynamic Parameters |
||||||
|
Input Capacitance |
Ciss | VDS = 15V, VGS = 0V, f=1MHZ |
4498 |
pF |
||
|
Output Capacitance |
Coss |
800 |
||||
|
Reverse Transfer Capacitance |
Crss |
643 |
||||
|
Switching Parameters |
||||||
|
Total Gate Charge |
Qg(10V) | VGS = 10V, VDS = 15V, ID = 20A, |
92.7 |
nC |
||
|
Qg(4.5V) |
46 |
|||||
|
Gate-Source Charge |
Qgs |
13.5 |
||||
|
Gate-Drain Charge |
Qgd |
22.8 |
||||
|
Reverse Recovery Charge |
Qrr | IF=20A, di/dt = 500A/us |
3.0 |
|||
|
Reverse Recovery Time |
Trr |
15 |
nS |
|||
|
Turn-on Delay Time |
TD(on) |
VGS = 10V, VDD = 20V, ID = 4A, RL = 0.75Ω, RGEN = 3Ω, |
11 |
|||
|
Turn-on Rise Time |
Tr |
80 |
||||
|
Turn-off Delay Time |
TD(off) |
39 |
||||
|
Turn-off fall Time |
Tf |
92 |
||||
YJG150N03A MOSFET FAQ
YJG150N03A MOSFET can handle up to 30V between the drain and source.
The YJG150N03A MOSFET can support a continuous current of up to 150A, making it ideal for high-power applications.
The YJG150N03A MOSFET features a low Rds(on), ensuring minimal power loss and high efficiency in your circuits.
Yes, the YJG150N03A is designed for fast switching, making it perfect for high-frequency power management tasks.
The YJG150N03A MOSFET is designed for efficient thermal management, ensuring reliable operation under high-power conditions.
Reference
Table Of Contents
| Package/Size |
PDFN-5×6-8L ,PDFN-8(5×6) ,PDFN(5×6) |
|---|---|
| Transistor Channel |
1 N-Channel |
| Drain Source Voltage (Vdss) |
30v |
| Continuous Drain Current (Id) |
150A |
| Power Dissipation (Pd) |
75W |
| Gate Threshold Voltage (Vgs(th)) |
1.5V@250uA |
| Pulsed Drain Current (Idm) |
300A |
| EasyEDA ID |
C919573 |
| MFR# |
– |
| Brand |
– |
| Mounting |
SMD/SMT |
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