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30V 150A MOSFET – YJG150N03A – 75W N-Channel
30.00৳ Pcs
YJG150N03A, a powerful 30V 150A MOSFET for efficient power management.
In stock
| Brand |
Yangzhou Yangjie Elec Tech |
|---|---|
| MFR# |
YJG150N03A |
| Package/Size |
PDFN-5×6-8L ,PDFN-8(5×6) ,PDFN(5×6) |
| Drain Source Voltage (Vdss) |
30v |
| Transistor Type |
1 N-Channel |
| Continuous Drain Current (Id) |
150A |
| Power Dissipation (Pd) |
75W |
| Gate Threshold Voltage (Vgs(th)) |
1.5V@250uA |
| Pulsed Drain Current (Idm) |
300A |
| Input Capacitance (Ciss@Vds) |
– |
| Operating Temperature |
– |
| EasyEDA ID |
C919573 |
YJG150N03A - 30V 150A MOSFET - 75W N-Channel
High-performance 30V 150A MOSFET, ideal for power management and high-current switching applications, offering low on-resistance and fast switching for efficient and reliable operation.
Simplified Schematic
Absolute Maximum Ratings
Parameter | SYMBOL | Value | Units | |
|---|---|---|---|---|
Drain-source Voltage | VDS | 30 | V | |
Gate-source Voltage | VGS | ±20 | ||
Drain Current | TC=25℃ | ID | 150 | A |
| TC=100℃ | 95 | |||
Pulsed Drain CurrentA | IDM | 300 | ||
Total Power Dissipation | TC=25℃ B | PD | 75 | W |
TC=100℃ B | 30 | |||
| TA=25℃ B | 6.2 | |||
Single Pulse Avalanche Energy D | EAS | 400 | mJ | |
Thermal Resistance Junction-to-Case | RθJC | 1.67 | ℃/ W | |
Thermal Resistance Junction-to-Ambient | RθJA | 20 | ||
Junction and Storage Temperature Range | TJ, TSTG | -55～+150 | ℃ | |
- A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
- B. The power dissipation PD is based on TJ(MAX)=150℃, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
- C. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25℃.
- D. Tj=25℃, VDD=20V, VG=10V, L=2.0mH, Rg=25Ω.
Electrical Specifications
Parameter | SYMBOL | CONDITIONS | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
Static Parameter | ||||||
Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250μA | 30 | - | - | V |
Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS = 0V | - | 1 | A | |
Gate-Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | ±100 | nA | ||
Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 1.0 | 1.5 | 2.5 | V |
Static Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A | - | 1.58 | 2.0 | mΩ |
| VGS = 4.5V, ID = 20A | - | 2.6 | 3.3 | |||
Diode Forward Voltage | VSD | IS = 20A, VGS = 0V | - | 0.85 | 1.2 | V |
Maximum Body-Diode Continuous Current | IS | 150 | A | |||
Gate resistance | RG | ƒ=1 MHz, Open drain | 2.9 | Ω | ||
Dynamic Parameters | ||||||
Input Capacitance | Ciss | VDS = 15V, VGS = 0V, f=1MHZ | 4498 | pF | ||
Output Capacitance | Coss | 800 | ||||
Reverse Transfer Capacitance | Crss | 643 | ||||
Switching Parameters | ||||||
Total Gate Charge | Qg(10V) | VGS = 10V, VDS = 15V, ID = 20A, | 92.7 | nC | ||
Qg(4.5V) | 46 | |||||
Gate-Source Charge | Qgs | 13.5 | ||||
Gate-Drain Charge | Qgd | 22.8 | ||||
Reverse Recovery Charge | Qrr | IF=20A, di/dt = 500A/us | 3.0 | |||
Reverse Recovery Time | Trr | 15 | nS | |||
Turn-on Delay Time | TD(on) |
VGS = 10V, VDD = 20V, ID = 4A, RL = 0.75Ω, RGEN = 3Ω, | 11 | |||
Turn-on Rise Time | Tr | 80 | ||||
Turn-off Delay Time | TD(off) | 39 | ||||
Turn-off fall Time | Tf | 92 | ||||
YJG150N03A MOSFET FAQ
YJG150N03A MOSFET can handle up to 30V between the drain and source.
The YJG150N03A MOSFET can support a continuous current of up to 150A, making it ideal for high-power applications.
The YJG150N03A MOSFET features a low Rds(on), ensuring minimal power loss and high efficiency in your circuits.
Yes, the YJG150N03A is designed for fast switching, making it perfect for high-frequency power management tasks.
The YJG150N03A MOSFET is designed for efficient thermal management, ensuring reliable operation under high-power conditions.
Reference
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