AllPOWER Full Bridge MOSFET : AP4580

AP4580 একটি ফুল-ব্রিজ মস্ফেট চিপ, এটা ভোল্টেজ কন্ট্রোল এবং অপটিমাইজড পাওয়ার ডেলিভারি করতে সক্ষম। এই চিপটি সুনির্দিষ্ট ভোল্টেজ কন্ট্রোল এবং হাই ইফিসিয়েন্সির জন্য ডিজাইন করা হয়েছে, যা সিস্টেমের পাওয়ার কন্সাম্পশন কমাতে সহায়তা করে। এটি সাধারণত মোবাইল চার্জার, পাওয়ার অ্যাডাপ্টার, LED ড্রাইভার ইত্যাদি ইলেকট্রনিক ডিভাইসে ব্যবহৃত হয়।

Simplified Schematic

এর ইন্টিগ্রেটেড MOSFET এবং হাই ইফিসিয়েন্সি সুইচিং টেকনোলজি ব্যবহার করে সর্বোচ্চ পাওয়ার ইফিসিয়েন্সি প্রদান করে। তাছাড়া এটি হাই রেসপন্স টাইম, কম ইলেকট্রোম্যাগনেটিক ইন্টারফারেন্স (EMI), এবং তাপ উৎপাদন কমিয়ে আনে। এর ইন্টেলিজেন্ট প্রটেকশন ফিচার সমূহ যেমন ওভার-কারেন্ট প্রটেকশন (OCP), ওভার-ভোল্টেজ প্রটেকশন (OVP), এবং শর্ট-সার্কিট প্রটেকশন (SCP) অত্যন্ত কার্যকর এবং নির্ভরযোগ্য।

Absolute Maximum Ratings

Parameter	Symbol	Rating (Max)		Units
Parameter	Symbol	N-Channel	P-Channel	Units
Drain-Source Voltage	V_DS	20	-20	V
Gate-Source Voltage	V_GS	±10	±10	V
Continuous Drain Current, t<10s V_GS@ -10V	I_D@T_C=25℃	2.0	-1.8	A
Continuous Drain Current, t<10s V_GS@ -10V	I_D@T_C=75℃	1.5	-1.3	A
PulsedDrain Current¹	I_DM	12	-10	A
Total Power Dissipation² @ T_A = 25℃	P_D	1.4	1.4	W
Total Power Dissipation² @ T_A = 75℃	P_D	1.0	0.9	W
Storage and Junction Temperature Range	T_STG, T_J	-55 to 150	-55 to 150	℃
Thermal Resistance Junction-ambient¹(t≦10s)	R_θJA	100	100	℃/W
Thermal Resistance Junction-ambient^1,2 (Steady State)	R_θJA	130	130	℃/W
Thermal Resistance Junction-case¹	R_θJC	90	90	℃/W

Note :

Repetitive Rating: Pulse width limited by maximum junction temperature
Surface mounted on FR4 Board, t≦10s
Pulse Test: Pulse width ≦300µs, Duty Cycle ≦2%

N-Channel Electrical Characteristics (TJ=25 ℃)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BV_Dss	V_GS= 0V , I_D= 250µA	20	----	----	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= 2.5V , I_D= 1.0A	----	70	90	mΩ
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= 4.5V , I_D= 2.0A	----	60	72	mΩ
Gate Threshold Voltage	V_GS(th)	V_GS=V_DS , I_D =-250µA	0.45	0.7	1.0	V
Drain-Source Leakage Current	I_DSS	V_DS=20V , V_GS=0V	----	----	1	µA
Gate-Source Leakage Current	I_GSS	V_GS=±10V , V_DS=0V	----	----	±100	nA
Forwward Trans-conductance	g_FS	V_DS=5V, I_D = 1.5A	----	20	----	S
Diode Forward Voltage	V_SD	V_GS=0V , I_S = 1.0A	----	----	1.2	V
Continuous Source Current	I_S	V_G=V_D=0V, Force Current	----	----	2.0	A
Total Gate Charge	Q_g	V_DS=10V, V_GS=6V, I_D=2.0A	----	2.7	----	nC
Gate-Source Charge	Q_gs		----	0.5	----
Gate-Drain Charge	Q_gd		----	0.4	----
Turn-On Delay Time	T_D(on)	V_DD=10V, V_GS=6V, R_G=6Ω, I_D=1A	----	2.3	----	nS
Rise Time	T_r		----	3.2	----
Turn-Off Delay Time	T_D(off)		----	20	----
Fall Time	T_f		----	3	----
Input Capacitance	C_ISS	V_DS=10V, V_GS=0V, f=1.0 MHz	----	240	----	pF
Output Capacitance	C_OSS		----	45	----
Reverse Transfer Capacitance	C_RSS		----	23	----

P-Channel Electrical Characteristics (TJ=25 ℃)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BV_Dss	V_GS= 0V , I_D= -250µA	-20	----	----	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= -2.5V , I_D= -1.0A	----	190	220	mΩ
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= -4.5V , I_D= -1.8A	----	128	146	mΩ
Gate Threshold Voltage	V_GS(th)	V_GS=V_DS , I_D =-250µA	-0.45	0.7	-1.0	V
Drain-Source Leakage Current	I_DSS	V_DS= -20V , V_GS=0V	----	----	-1	µA
Gate-Source Leakage Current	I_GSS	V_GS=±10V , V_DS=0V	----	----	±100	nA
Forwward Trans-conductance	g_FS	V_DS= -5V, I_D = -1.0A	----	15	----	S
Diode Forward Voltage	V_SD	V_GS=0V , I_S = -1.0A	----	----	-1.2	V
Continuous Source Current	I_S	V_G=V_D=0V, Force Current	----	----	-1.8	A
Total Gate Charge	Q_g	V_DS=-10V, V_GS= -6V, I_D= -1.8A	----	3.0	----	nC
Gate-Source Charge	Q_gs		----	0.5	----
Gate-Drain Charge	Q_gd		----	0.8	----
Turn-On Delay Time	T_D(on)	V_DD= -10V, V_GS= -6V, R_G= 6Ω, I_D= -1A	----	9.5	----	nS
Rise Time	T_r		----	4.9	----
Turn-Off Delay Time	T_D(off)		----	21.5	----
Fall Time	T_f		----	10	----
Input Capacitance	C_ISS	V_DS= -10V, V_GS= 0V, f= 1.0 MHz	----	290	----	pF
Output Capacitance	C_OSS		----	100	----
Reverse Transfer Capacitance	C_RSS		----	34	----

AP4580 Full Bridge MOSFET | High Efficiency Power Management IC 2

Figure 1: Switching test circuit

AP4580 Full Bridge MOSFET | High Efficiency Power Management IC 3

Figure 2: Switching Waveforms of AP4580

FAQs and Answers

Q1: What is the main application of the AP4580 MOSFET?

The AP4580 MOSFET is primarily designed for power management in devices like mobile chargers, LED drivers, and DC-DC converters.

Q2: Does the AP4580 MOSFET support over-current protection?

Yes, the AP4580 MOSFET includes over-current protection (OCP) to ensure safe operation in high-power environments.

Q3: What efficiency does the AP4580 MOSFET provide?

The AP4580 MOSFET is designed for high energy efficiency, minimizing power loss and heat generation.

Q4: What safety features does the AP4580 MOSFET offer?

It includes multiple safety features such as over-current protection (OCP), over-voltage protection (OVP), and short-circuit protection (SCP).

Reference

AP4580 datasheet , ALLPOWER(ShenZhen Quan Li Semiconductor) AP4580

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AP4580 Full Bridge MOSFET | High Efficiency Power Management IC

Name: AP4580 Full Bridge MOSFET | High Efficiency Power Management IC
Brand: -
SKU: S18091
Price: 15 BDT
Availability: In Stock
Rating: 5 (1 reviews)

15.00৳

স্বয়ংক্রিয় PWM/PFM মোড সুইচিং
কম তাপ উৎপাদন এবং উচ্চ দক্ষতা
ইন্টিগ্রেটেড MOSFET
ওভার-কারেন্ট প্রটেকশন (OCP)
ওভার-ভোল্টেজ প্রটেকশন (OVP)
শর্ট-সার্কিট প্রটেকশন (SCP)
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SKU: S18091 Categories: MOSFETs, Transistor

Description

Parameter	Symbol	Rating (Max)		Units
Parameter	Symbol	N-Channel	P-Channel	Units
Drain-Source Voltage	V_DS	20	-20	V
Gate-Source Voltage	V_GS	±10	±10	V
Continuous Drain Current, t<10s V_GS@ -10V	I_D@T_C=25℃	2.0	-1.8	A
Continuous Drain Current, t<10s V_GS@ -10V	I_D@T_C=75℃	1.5	-1.3	A
PulsedDrain Current¹	I_DM	12	-10	A
Total Power Dissipation² @ T_A = 25℃	P_D	1.4	1.4	W
Total Power Dissipation² @ T_A = 75℃	P_D	1.0	0.9	W
Storage and Junction Temperature Range	T_STG, T_J	-55 to 150	-55 to 150	℃
Thermal Resistance Junction-ambient¹(t≦10s)	R_θJA	100	100	℃/W
Thermal Resistance Junction-ambient^1,2 (Steady State)	R_θJA	130	130	℃/W
Thermal Resistance Junction-case¹	R_θJC	90	90	℃/W

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BV_Dss	V_GS= 0V , I_D= 250µA	20	----	----	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= 2.5V , I_D= 1.0A	----	70	90	mΩ
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= 4.5V , I_D= 2.0A	----	60	72	mΩ
Gate Threshold Voltage	V_GS(th)	V_GS=V_DS , I_D =-250µA	0.45	0.7	1.0	V
Drain-Source Leakage Current	I_DSS	V_DS=20V , V_GS=0V	----	----	1	µA
Gate-Source Leakage Current	I_GSS	V_GS=±10V , V_DS=0V	----	----	±100	nA
Forwward Trans-conductance	g_FS	V_DS=5V, I_D = 1.5A	----	20	----	S
Diode Forward Voltage	V_SD	V_GS=0V , I_S = 1.0A	----	----	1.2	V
Continuous Source Current	I_S	V_G=V_D=0V, Force Current	----	----	2.0	A
Total Gate Charge	Q_g	V_DS=10V, V_GS=6V, I_D=2.0A	----	2.7	----	nC
Gate-Source Charge	Q_gs		----	0.5	----
Gate-Drain Charge	Q_gd		----	0.4	----
Turn-On Delay Time	T_D(on)	V_DD=10V, V_GS=6V, R_G=6Ω, I_D=1A	----	2.3	----	nS
Rise Time	T_r		----	3.2	----
Turn-Off Delay Time	T_D(off)		----	20	----
Fall Time	T_f		----	3	----
Input Capacitance	C_ISS	V_DS=10V, V_GS=0V, f=1.0 MHz	----	240	----	pF
Output Capacitance	C_OSS		----	45	----
Reverse Transfer Capacitance	C_RSS		----	23	----

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BV_Dss	V_GS= 0V , I_D= -250µA	-20	----	----	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= -2.5V , I_D= -1.0A	----	190	220	mΩ
Static Drain-Source On-Resistance	R_DS(ON)	V_GS= -4.5V , I_D= -1.8A	----	128	146	mΩ
Gate Threshold Voltage	V_GS(th)	V_GS=V_DS , I_D =-250µA	-0.45	0.7	-1.0	V
Drain-Source Leakage Current	I_DSS	V_DS= -20V , V_GS=0V	----	----	-1	µA
Gate-Source Leakage Current	I_GSS	V_GS=±10V , V_DS=0V	----	----	±100	nA
Forwward Trans-conductance	g_FS	V_DS= -5V, I_D = -1.0A	----	15	----	S
Diode Forward Voltage	V_SD	V_GS=0V , I_S = -1.0A	----	----	-1.2	V
Continuous Source Current	I_S	V_G=V_D=0V, Force Current	----	----	-1.8	A
Total Gate Charge	Q_g	V_DS=-10V, V_GS= -6V, I_D= -1.8A	----	3.0	----	nC
Gate-Source Charge	Q_gs		----	0.5	----
Gate-Drain Charge	Q_gd		----	0.8	----
Turn-On Delay Time	T_D(on)	V_DD= -10V, V_GS= -6V, R_G= 6Ω, I_D= -1A	----	9.5	----	nS
Rise Time	T_r		----	4.9	----
Turn-Off Delay Time	T_D(off)		----	21.5	----
Fall Time	T_f		----	10	----
Input Capacitance	C_ISS	V_DS= -10V, V_GS= 0V, f= 1.0 MHz	----	290	----	pF
Output Capacitance	C_OSS		----	100	----
Reverse Transfer Capacitance	C_RSS		----	34	----

Additional information

Package/Size	SOT-23-8L
Transistor Channel	Full Bridge , N-Channel , P-Channel
Drain Source Voltage (Vdss)	-20V , 20V
Continuous Drain Current (Id)	-1.3A , 1.5A
Power Dissipation (Pd)	1.4W
EasyEDA ID	C2849569
MFR#	–
Brand	–
Mounting	–

FAQ & Datasheet

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AP4580 Full Bridge MOSFET | High Efficiency Power Management IC

AllPOWER Full Bridge MOSFET : AP4580

Simplified Schematic

Absolute Maximum Ratings

N-Channel Electrical Characteristics (TJ=25 ℃)

P-Channel Electrical Characteristics (TJ=25 ℃)

Table Of Contents

FAQs and Answers

Reference

Reviews

Call us

AP4580 Full Bridge MOSFET | High Efficiency Power Management IC

AllPOWER Full Bridge MOSFET : AP4580

Simplified Schematic

Absolute Maximum Ratings

N-Channel Electrical Characteristics (TJ=25 ℃)

P-Channel Electrical Characteristics (TJ=25 ℃)

Table Of Contents

FAQs and Answers

Reference

Reviews

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AP4580 Full Bridge MOSFET | High Efficiency Power Management IC

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