VBZM150N03 N-Channel 30V (D-S) MOSFET

এটি একটি শক্তিশালী N-Channel 30V MOSFET, যা বিশেষভাবে DC/DC কনভার্টার, UPS/IPS এবং OR-ing এর মতো অ্যাপ্লিকেশনে ব্যবহারের জন্য ডিজাইন করা হয়েছে। এর DT-Trench Power MOSFET প্রযুক্তি হাই পারফরম্যান্স এবং ইফিসিয়েন্সি নিশ্চিত করে। প্রোডাক্টটি RoHS Directive 2011/65/EU অনুসারে কমপ্লায়েন্ট এবং প্রতিটি ইউনিট Rg ও UIS টেস্টেড।

Simplified Schematic

VBZM150N03 একটি হাই কুয়ালিটি N-Channel MOSFET যা 30V_DS ড্রেন সোর্স ভোল্টেজ এবং 140A পর্যন্ত ড্রেন কারেন্ট সাপোর্ট করে। এর গেট-সোর্স ভোল্টেজ (VGS) ±20V পর্যন্ত সহ্য করতে পারে, যা কন্ট্রোলিং এবং ড্রাইভিং সার্কিটের স্থায়িত্ব নিশ্চিত করে এবং ইন্সট্যান্টেনিয়াস লোডের ক্ষেত্রে খুবই উপযোগী।

Absolute Maximum Ratings

Parameter		Symbol	Rating (Max)	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±10	V
Continuous Drain Current, (T_J=175℃)	T_C=25℃	I_D	140 ^a, ^e	A
	T_C=70℃		110^e
	T_A=25℃		39^b, ^c
	T_A=70℃		28^b, ^c
Continuous Source-Drain Diode Current	T_C=25℃	I_S	90^{a, e}
Continuous Source-Drain Diode Current	T_A=25℃	I_S	3.13^{b, c}
Pulsed Drain Current		I_DM	370
Avalanche Current Pulse	L = 0.1 mH	I_AS	39
Single Pulse Avalanche Energy	L = 0.1 mH	E_AS	375	mJ
Maximum Power Dissipation	T_C=25℃	P_D	250^a	W
	T_C=70℃		175
	T_A=25℃		3.75^{b, c}
	T_A=70℃		2.63^{b, c}
Storage and Junction Temperature Range		T_STG, T_J	-55 to 175	℃

এগুলো শুধুমাত্র স্ট্রেস রেটিং। এর বেশি হলে মস্ফেটটি পুড়ে যেতে পারে।

Specifications of VBZM150N03 MOSFET

Static Parameters

Parameter	Symbol	Test Conditions	Min	Typ.	Max	Unit
Drain-Source Breakdown Voltage	V_DS	V_GS = 0 V, I_D = 250 µA	30	----	----	V
Temperature Coefficient	∆V_DS/T_J	I_D = 250 µA	----	35	----	mV/°C
Temperature Coefficient	∆V_GS/T_J	I_D = 250 µA	----	-7.5	----	mV/°C
Gate-Source Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250 µA	1.0	----	3.0	V
Gate-Source Leakage	I_GSS	V_DS = 0 V, V_GS = ± 20 V	----	----	±100	nA
Zero Gate Voltage Drain Current	I_DSS	V_DS = 0 V, V_GS = ± 20 V	----	----	1	µA
Zero Gate Voltage Drain Current	I_DSS	V_DS = 24 V_GS = 0 V, T_J = 55 °C	----	----	10	µA
On-State Drain Current^f	I_D(on)	V_DS ≥5 V, V_GS = 10 V	90	----	----	A
Forward Transconductance^g	g_FS	V_DS = 15 V, I_D = 38.8 A	----	160	----	S
Drain-Source On-State Resistance^f	R_DS(on)	V_GS = 10 V, I_D = 38.8 A	----	0.0020	----	Ω
Drain-Source On-State Resistance^f	R_DS(on)	V_GS = 4.5 V, I_D = 37 A	----	0.0028	----	Ω

Dynamic Parameters

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Input Capacitance	C_ISS	V_DS = 15 V, V_GS = 0 V, f = 1 MHz	----	8400	----	pF
Output Capacitance	C_OSS		----	1725	----
Reverse Transfer Capacitance	C_RSS		----	970	----
Total Gate Charge	Q_G	V_DS = 15 V, V_GS = 10 V, I_D = 38.8 A	----	171	257	nC
Total Gate Charge	Q_G	V_DS = 15 V, V_GS = 4.5 V, I_D = 28.8 A	----	81.5	123
Gate-Source Charge	Q_GS		----	34	----
Gate-Drain Charge	Q_GD		----	29	----
Gate Resistance	R_G	f = 1 MHz	----	1.4	2.1	Ω
Turn-On Delay Time	t_D(on)	V_DD = 15 V, R_L = 0.625 Ω I_D ≅ 24 A, V_GEN = 10 V, R_g = 1 Ω	----	18	27	nS
Rise Time	t_R			11	17
Turn-Off Delay Time	t_D(off)			70	105
Fall Time	t_F			10	15
Turn-On Delay Time	t_D(on)	V_DD = 15 V, R_L = 0.67 Ω I_D ≅ 22.5 A, V_GEN = 4.5 V, R_g = 1 Ω	----	55	83
Rise Time	t_R			180	270
Turn-Off Delay Time	t_D(off)			55	83
Fall Time	t_F			12	18

Drain-Source Body Diode Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Input Capacitance	C_ISS	T_C = 25°C	----	140	----	A
Pulse Diode Forward Current^f	I_SM	----	----	370	----	A
Body Diode Voltage	V_SD	I_S = 22A	----	0.8	----	V
Body Diode Reverse Recovery Time	t_RR	I_F = 20 A, di/dt = 100 A/µs, T_J = 25 °C	----	52	78	nS
Body Diode Reverse Recovery Charge	Q_RR		----	70.2	105	nC
Reverse Recovery Fall Time	t_RRF		----	27	----	nS
Reverse Recovery Rise Time	t_RRR		----	25	----	nS

Thermal Resistance Ratings

Parameter		Symbol	Typ.	Max	Unit
Thermal Resistance Junction-ambient^{a, d}	t≦10s	R_θJA	32	40	℃/W
Thermal Resistance Junction-case	Steady State	R_θJC	0.5	0.6	℃/W

Note:

Based on T_C = 25 °C.
Surface mounted on 1" x 1" FR4 board.
t = 10 sec.
Maximum under steady state conditions is 90 °C/W.
Calculated based on maximum junction temperature. Package limitation current is 90 A.
Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.

S9014 BjT - 45V 100mA NPN Bipolar Transistors 2

Figure 1: Switching test circuit

S9014 BjT - 45V 100mA NPN Bipolar Transistors 3

Figure 2: Switching Waveforms of AP4580

FAQs and Answers

Q1: What is the voltage rating of the VBZM150N03 MOSFET?

The VBZM150N03 MOSFET has a Drain-Source voltage rating of 30V.

Q2: What is the maximum drain current that the VBZM150N03 can handle?

The maximum continuous drain current for the VBZM150N03 is 140A, making it suitable for high-power applications.

Q3: What is the RDS(on) value of the VBZM150N03?

The RDS(on) value of the VBZM150N03 is 0.0020Ω when the Gate-Source voltage (VGS) is 10V.

Q4: In what applications can the VBZM150N03 be used?

The VBZM150N03 MOSFET is ideal for use in applications such as DC/DC Converters, Server Power Systems, OR-ing, UPS, IPS and Power Supply.

Q4: What is the operating temperature range for the VBZM150N03?

The VBZM150N03 MOSFET has an operating temperature range of -55°C to +175°C, ensuring reliable performance in a wide range of environments.

Reference

VBsemi-Elec-VBZM150N03 datasheet, VBsemi Elec VBZM150N03

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S9014 BjT – 45V 100mA NPN Bipolar Transistors

Name: S9014 BjT - 45V 100mA NPN Bipolar Transistors
Brand: HXY MOSFET
SKU: S18405
Price: 2.25 BDT
Availability: In Stock
Rating: 5 (1 reviews)

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45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar (BJT)

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SKU: S18405 Categories: BJT - Bipolar Junction Transistor, Transistor

Description

Parameter		Symbol	Rating (Max)	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±10	V
Continuous Drain Current, (T_J=175℃)	T_C=25℃	I_D	140 ^a, ^e	A
	T_C=70℃		110^e
	T_A=25℃		39^b, ^c
	T_A=70℃		28^b, ^c
Continuous Source-Drain Diode Current	T_C=25℃	I_S	90^{a, e}
Continuous Source-Drain Diode Current	T_A=25℃	I_S	3.13^{b, c}
Pulsed Drain Current		I_DM	370
Avalanche Current Pulse	L = 0.1 mH	I_AS	39
Single Pulse Avalanche Energy	L = 0.1 mH	E_AS	375	mJ
Maximum Power Dissipation	T_C=25℃	P_D	250^a	W
	T_C=70℃		175
	T_A=25℃		3.75^{b, c}
	T_A=70℃		2.63^{b, c}
Storage and Junction Temperature Range		T_STG, T_J	-55 to 175	℃

Parameter	Symbol	Test Conditions	Min	Typ.	Max	Unit
Drain-Source Breakdown Voltage	V_DS	V_GS = 0 V, I_D = 250 µA	30	----	----	V
Temperature Coefficient	∆V_DS/T_J	I_D = 250 µA	----	35	----	mV/°C
Temperature Coefficient	∆V_GS/T_J	I_D = 250 µA	----	-7.5	----	mV/°C
Gate-Source Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250 µA	1.0	----	3.0	V
Gate-Source Leakage	I_GSS	V_DS = 0 V, V_GS = ± 20 V	----	----	±100	nA
Zero Gate Voltage Drain Current	I_DSS	V_DS = 0 V, V_GS = ± 20 V	----	----	1	µA
Zero Gate Voltage Drain Current	I_DSS	V_DS = 24 V_GS = 0 V, T_J = 55 °C	----	----	10	µA
On-State Drain Current^f	I_D(on)	V_DS ≥5 V, V_GS = 10 V	90	----	----	A
Forward Transconductance^g	g_FS	V_DS = 15 V, I_D = 38.8 A	----	160	----	S
Drain-Source On-State Resistance^f	R_DS(on)	V_GS = 10 V, I_D = 38.8 A	----	0.0020	----	Ω
Drain-Source On-State Resistance^f	R_DS(on)	V_GS = 4.5 V, I_D = 37 A	----	0.0028	----	Ω

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Input Capacitance	C_ISS	V_DS = 15 V, V_GS = 0 V, f = 1 MHz	----	8400	----	pF
Output Capacitance	C_OSS		----	1725	----
Reverse Transfer Capacitance	C_RSS		----	970	----
Total Gate Charge	Q_G	V_DS = 15 V, V_GS = 10 V, I_D = 38.8 A	----	171	257	nC
Total Gate Charge	Q_G	V_DS = 15 V, V_GS = 4.5 V, I_D = 28.8 A	----	81.5	123
Gate-Source Charge	Q_GS		----	34	----
Gate-Drain Charge	Q_GD		----	29	----
Gate Resistance	R_G	f = 1 MHz	----	1.4	2.1	Ω
Turn-On Delay Time	t_D(on)	V_DD = 15 V, R_L = 0.625 Ω I_D ≅ 24 A, V_GEN = 10 V, R_g = 1 Ω	----	18	27	nS
Rise Time	t_R			11	17
Turn-Off Delay Time	t_D(off)			70	105
Fall Time	t_F			10	15
Turn-On Delay Time	t_D(on)	V_DD = 15 V, R_L = 0.67 Ω I_D ≅ 22.5 A, V_GEN = 4.5 V, R_g = 1 Ω	----	55	83
Rise Time	t_R			180	270
Turn-Off Delay Time	t_D(off)			55	83
Fall Time	t_F			12	18

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Input Capacitance	C_ISS	T_C = 25°C	----	140	----	A
Pulse Diode Forward Current^f	I_SM	----	----	370	----	A
Body Diode Voltage	V_SD	I_S = 22A	----	0.8	----	V
Body Diode Reverse Recovery Time	t_RR	I_F = 20 A, di/dt = 100 A/µs, T_J = 25 °C	----	52	78	nS
Body Diode Reverse Recovery Charge	Q_RR		----	70.2	105	nC
Reverse Recovery Fall Time	t_RRF		----	27	----	nS
Reverse Recovery Rise Time	t_RRR		----	25	----	nS

Parameter		Symbol	Typ.	Max	Unit
Thermal Resistance Junction-ambient^{a, d}	t≦10s	R_θJA	32	40	℃/W
Thermal Resistance Junction-case	Steady State	R_θJC	0.5	0.6	℃/W

Additional information

Brand	HXY MOSFET
Package/Size	SOT-23
Collector-Emitter Breakdown Voltage (Vceo)	45V
Power Dissipation (Pd)	200mW
EasyEDA ID	C920324
MFR#	–
Mounting	SMD/SMT

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S9014 BjT – 45V 100mA NPN Bipolar Transistors

VBZM150N03 N-Channel 30V (D-S) MOSFET

Simplified Schematic

Absolute Maximum Ratings

Specifications of VBZM150N03 MOSFET

Thermal Resistance Ratings

Note:

Table Of Contents

FAQs and Answers

Reference

Reviews

Call us

S9014 BjT – 45V 100mA NPN Bipolar Transistors

VBZM150N03 N-Channel 30V (D-S) MOSFET

Simplified Schematic

Absolute Maximum Ratings

Specifications of VBZM150N03 MOSFET

Thermal Resistance Ratings

Note:

Table Of Contents

FAQs and Answers

Reference

Reviews

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S9014 BjT – 45V 100mA NPN Bipolar Transistors

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