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HXY70P03D P Channel Enhancement Mode MOSFET 30V 70A 90W AOD403 HXY smdpicker.com

HXY70P03D AOD403 HXY MOSFET pinout smdpicker.com

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HXY70P03D MOSFET – High-Efficiency P-Channel Power MOSFET AOD403-HXY

25.00৳

Drain-Source Voltage (Vds): -30V
Continuous Drain Current (Id): -70A
Gate-Source Voltage (Vgs): ±20V
Low Rds(on): 8-10 mΩ at Vgs = -10V
High Power Dissipation: Up to 150W (depending on package)
Fast Switching Speed
Operating Temperature Range: -55°C to +175°C

25.00৳

1 - 9

24.40৳

10 - 49

24.10৳

50 - 99

23.90৳

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SKU: S17787 Categories: MOSFETs, Transistor Brand: HXY MOSFET

স্পেসিফিকেশন
বিবরণ

স্পেসিফিকেশন

Brand	HXY MOSFET
Package/Size	TO-252-2L
Transistor Type	P-Channel
Drain Source Voltage (Vdss)	30v
Continuous Drain Current (Id)	70A
Power Dissipation (Pd)	90W
EasyEDA ID	C4748761
MFR#	–
Mounting	–

বিবরণ

HXY70P03D AOD403-HXY MOSFET

The HXY70P03D MOSFET is a high-performance P-channel MOSFET designed to meet the demands of modern power management and switching applications. With its low on-resistance, high current capability, and robust design, the HXY70P03D is an ideal choice for engineers and designers looking to optimize the efficiency and reliability of their electronic circuits. It's also marked as AOD403-HXY.

Simplified Schematic

The HXY70P03D MOSFET is engineered for excellence in performance and durability. Whether you're designing power supplies, motor drivers, or DC-DC converters, this P-channel MOSFET provides the reliability and efficiency needed to drive high-current loads with minimal power loss. Its low on-resistance reduces conduction losses, while its high current capability ensures that even the most demanding applications can be handled with ease.

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
V_DS	Drain-Source Voltage	-30	V
V_GS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current, V_GS@ -10V^1,6	-70	A
I_D@T_C=100℃	Continuous Drain Current, V_GS@ -10V^1,6	-50	A
I_DM	PulsedDrain Current²	-200	A
EAS	Single PulseAvalanche Energy³	80	mJ
I_AS	Avalanche Current	-40	A
P_D@T_C=25℃	Total Power Dissipation⁴	90	W
T_STG	Storage Temperature Range	-55 to 175	℃
T_J	Operating Junction Temperature Range	-55 to 175	℃
R_θJA	Thermal Resistance Junction-ambient ¹(t≦10S)	20	℃/W
R_θJA	Thermal Resistance Junction-ambient ¹(Steady State)	50	℃/W
R_θJC	Thermal Resistance Junction-case¹	1.6	℃/W

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
BV_Dss	Drain-Source Breakdown Voltage	V_GS=0V , I_D=-250uA	-30	----	----	V
R_DS(ON)	Static Drain-Source On-Resistance²	V_GS=-10V , I_D=-20A	----	7	10	mΩ
R_DS(ON)	Static Drain-Source On-Resistance²	V_GS=-4.5V , I_D=-15A	----	11	18	mΩ
V_GS(th)	Gate Threshold Voltage	V_GS=VDS , I_D =-250uA	-1.2	----	-2.5	V
I_DSS	Drain-Source Leakage Current	V_DS=-24V , V_GS=0V , T_J=25℃	----	----	-1	uA
I_DSS	Drain-Source Leakage Current	V_DS=-24V , V_GS=0V , T_J=55℃	----	----	-5	uA
I_GSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	----	----	±100	nA
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	----	1.2	----	Ω
Q_g	Total Gate Charge (-10V)	V_DS=-15V, V_GS=-10V, I_D=-18A	----	60	----	nC
Q_gs	Gate-Source Charge		----	9	----
Q_gd	Gate-Drain Charge		----	15	----
T_d(on)	Turn-On Delay Time	V_DD=-15V, V_GS=-10V, R_G=3.3Ω, I_D=-20A	----	17	----	nS
T_r	Rise Time		----	40	----
T_d(off)	Turn-Off Delay Time		----	55	----
T_f	Fall Time		----	13	----
C_ISS	Input Capacitance	V_DS=-25V , V_GS=0V , f=1MHz	----	3450	----	pF
C_OSS	Output Capacitance		----	255	----
C_RSS	Reverse Transfer Capacitance		----	140	----
I_S	Continuous Source Current^1,5	V_G=V_D=0V , Force Current	----	----	-70	A
V_SD	Diode Forward Voltage²	V_GS=0V , I_S=-1A , T_J=25℃	----	----	-1.2	V
T_RR	Reverse Recovery Time	I_F=-20A , di/dt=100A/µs, T_J=25℃	----	22	----	nS
Q_RR	Reverse Recovery Charge	I_F=-20A , di/dt=100A/µs, T_J=25℃	----	72	----	nC

Note :

The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
The EAS data shows Max. rating . The test condition is V_DD=-50V,V_GS=-10V,L=0.1mH,I_AS=-40A.
The power dissipation is limited by 150℃ junction temperature.
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
The maximum current rating is package limited.

FAQ about NE-555 Ic

What is the maximum drain-source voltage for the HXY70P03D?

The maximum drain-source voltage (Vds) for the HXY70P03D is -30V.

How much continuous drain current can the HXY70P03D handle?

The HXY70P03D can handle a continuous drain current (Id) of up to -70A at 25°C.

What is the typical on-resistance (Rds(on)) of the HXY70P03D?

The typical on-resistance (Rds(on)) of the HXY70P03D is between 8 to 10 mΩ when the gate-source voltage (Vgs) is -10V.

Can the HXY70P03D be used in high-temperature environments?

Yes, the HXY70P03D is designed to operate within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.

Is the HXY70P03D suitable for use in inverter circuits?

Absolutely. The HXY70P03D's high efficiency and robust design make it an excellent choice for inverter circuits, including those used in solar power systems.

Reference

HXY70P03D datasheet

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HXY70P03D MOSFET – High-Efficiency P-Channel Power MOSFET AOD403-HXY

HXY70P03D AOD403-HXY MOSFET

Simplified Schematic

Absolute Maximum Ratings

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

FAQ about NE-555 Ic

Reference

Table Of Contents

Reviews

Call us

HXY70P03D MOSFET – High-Efficiency P-Channel Power MOSFET AOD403-HXY

HXY70P03D AOD403-HXY MOSFET

Simplified Schematic

Absolute Maximum Ratings

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

FAQ about NE-555 Ic

Reference

Table Of Contents

Reviews

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HXY70P03D MOSFET – High-Efficiency P-Channel Power MOSFET AOD403-HXY

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